Mechanisms Underlying the Bidirectional V T Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9410657/09378946.pdf?arnumber=9378946
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO2 Gate Dielectric;IEEE Transactions on Electron Devices;2023-11
2. Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress;Journal of Semiconductors;2023-07-01
3. Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
4. Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
5. Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga2O3 MOSFET;IEEE Transactions on Electron Devices;2022-10
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