Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests
Author:
Affiliation:
1. University of Padova,Department of Information Engineering,Padova,Italy,35131
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118131.pdf?arnumber=10118131
Reference28 articles.
1. GaN HEMT thermal behavior and implications for reliability testing and analysis
2. GaN-based HEMTs tested under high temperature storage test
3. AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
4. Mechanisms Underlying the Bidirectional V T Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs
5. Radiation resistance of wide-bandgap semiconductor power transistors
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3. Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis;Microelectronics Reliability;2023-11
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