PCM-Based Analog Compute-In-Memory: Impact of Device Non-Idealities on Inference Accuracy-Reference-Cited by-同舟云学术

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PCM-Based Analog Compute-In-Memory: Impact of Device Non-Idealities on Inference Accuracy

Published:2021-11 Issue:11 Volume:68 Page:5585-5591
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun X.^ORCID,Khwa W. S.,Chen Y. S.,Lee C. H.,Lee H. Y.,Yu S. M.,Naous R.,Wu J. Y.,Chen T. C.,Bao X.^ORCID,Chang M. F.,Diaz C. H.,Wong H.-S. P.,Akarvardar K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9583611/09548670.pdf?arnumber=9548670

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs;npj Unconventional Computing;2024-09-02

2. HYDRA: A Hybrid Resistance Drift Resilient Architecture for Phase Change Memory-Based Neural Network Accelerators;IEEE Transactions on Computers;2024-09

3. Read Noise Analysis in Analog Conductive-Metal-Oxide/HfO_x ReRAM Devices;2024 Device Research Conference (DRC);2024-06-24

4. Optimizing TiTe₂/Ge₄Sb₆Te₇ Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change Memory;2024 Device Research Conference (DRC);2024-06-24

5. Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits;Advanced Electronic Materials;2024-05-08

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