Read Noise Analysis in Analog Conductive-Metal-Oxide/HfO<sub>x</sub> ReRAM Devices-Reference-Cited by-同舟云学术

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Read Noise Analysis in Analog Conductive-Metal-Oxide/HfO_x ReRAM Devices

Published:2024-06-24 Issue: Volume:24 Page:1-2
ISSN:
Container-title:2024 Device Research Conference (DRC)
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Author:

Lombardo Davide G. F.¹,Ram Mamidala Saketh¹,Stecconi Tommaso¹,Choi Wooseok¹,Porta Antonio La¹,Falcone Donato F.¹,Offrein Bert¹,Bragaglia Valeria¹

Affiliation:

1. IBM Research Europe-Zurich,Rüschlikon,Switzerland,CH-8803

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10605129/10605242/10643760.pdf?arnumber=10643760

Reference13 articles.

1. Analog Resistive Switching Devices for Training Deep Neural Networks with the Novel Tiki-Taka Algorithm

2. Filamentary TaO _x /HfO ₂ ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing

3. Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

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