Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics-Reference-Cited by-同舟云学术

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Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics

Published:2004-01 Issue:1 Volume:51 Page:98-105
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu W.,Han J.-P.,Ma T.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/28140/01258151.pdf?arnumber=1258151

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