Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Author:

Hjelmgren Hans,Thorsell Mattias,Andersson Kristoffer,Rorsman Niklas

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors;Journal of Applied Physics;2019-04-07

2. Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications;International Journal of High Speed Electronics and Systems;2019-03

3. Analysis of Lateral Thermal Coupling for GaN MMIC Technologies;IEEE Transactions on Microwave Theory and Techniques;2018-10

4. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors;Journal of Applied Physics;2018-05-14

5. A scalable and multibias parameter extraction method for a small-signal GaN HEMT model;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-04-16

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