An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, New York University, Brooklyn, New York 11201, USA
Funder
Boeing
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5025339
Reference65 articles.
1. GaN-Based RF Power Devices and Amplifiers
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5. AlGaN/GaN HEMTs-an overview of device operation and applications
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1. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects;Journal of Applied Physics;2021-10-28
2. Compact modeling of gate leakage phenomenon in GaN HEMTs;2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2020-09-23
3. A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors;Journal of Applied Physics;2019-04-28
4. A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors;Journal of Applied Physics;2019-04-07
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