Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment-Reference-Cited by-同舟云学术

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Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment

Published:2012-06 Issue:6 Volume:59 Page:1621-1628
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Valin Raul,Sampedro Carlos,Aldegunde Manuel,Garcia-Loureiro Antonio,Seoane Natalia,Godoy Andres,Gamiz Francisco

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6200907/06193421.pdf?arnumber=6193421

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

2. Impact of gate-on-source misalignment on the analog and digital performance of tunnel FET;Pramana;2021-07-27

3. An Extensive Simulation Study of Gate Underlap Influence on Device Performance of Surrounding Gate In0.53Ga0.47As/InP Hetero Field Effect Transistor;Nanoscience & Nanotechnology-Asia;2020-02-25

4. An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET;ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management;2019-06-28

5. Influence of gate and channel engineering on multigate MOSFETs-A review;Microelectronics Journal;2017-08

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