An Extensive Simulation Study of Gate Underlap Influence on Device Performance of Surrounding Gate In0.53Ga0.47As/InP Hetero Field Effect Transistor

Abstract

Background: This work describes the implementation of In0.53Ga0.47As/InP Surrounding Metal Gate Oxide Semiconductor Heterostructure Field Effect Transistor (SG MOSHFET) with gate underlap on both source and drain end to improve the DC and RF performance. Methods: A comprehensive and methodological investigation of DC and RF performance of III-V semiconductor are made for different underlap length varying from 5nm to 30nm on both sides of the device, which is used to mitigate the short channel issues to improve the device performance. Hydrodynamic model has been taken into consideration for the device simulation and it also includes Auger recombination and the Shockley–Read–Hall (SRH) model. Simulation is performed to analyze the various analog performance of device like drain current, surface potential, transconductance, threshold voltage, drain induced barrier lowering, off current, subthreshold slope, Ion/Ioff ratio, output conductance, intrinsic delay, energy-delay product, transconductance generation factor and radio frequency performance of device, like trans-frequency product and cut-off frequency. Results: From the simulation, it can be observed that an improved analog and RF performance is obtained at the optimum underlap length. Conclusion: This work delivers an idea for extended researchers to investigate different aspects of group III–V underlap MOSFETs.