Reliability issues in AlGaN based deep ultraviolet light emitting diodes
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5164157/5173200/05173229.pdf?arnumber=5173229
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate;Applied Physics Letters;2023-05-15
2. Reliability Analysis of AlGaN-Based Deep UV-LEDs;Nanomaterials;2022-10-24
3. Reliability of Commercial UVC LEDs: 2022 State-of-the-Art;Electronics;2022-02-26
4. Influence of potassium hydroxide molarity and etching time on etching of Al-rich aluminium gallium nitride layer;International Journal of Nanotechnology;2022
5. Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence;Japanese Journal of Applied Physics;2019-05-20
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