TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates-Reference-Cited by-同舟云学术

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TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates

Published:2009 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Reliability Physics Symposium
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Author:

Kerber A.,Cartier E.,Linder B.P.,Krishnan S.A.,Nigam T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5164157/5173200/05173304.pdf?arnumber=5173304

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

2. Modeling Degradation and Breakdown in SiO₂ and High-k Gate Dielectrics;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

3. Reliability of Metal Gate / High-k devices and its impact on CMOS technology scaling;MRS Advances;2017-07-25

4. Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress;IEEE Transactions on Device and Materials Reliability;2017-06

5. Reliability of HfO2metal–insulator–metal capacitors under AC stress;Journal of Physics D: Applied Physics;2016-03-21

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