Reliability of HfO2metal–insulator–metal capacitors under AC stress-Reference-Cited by-同舟云学术

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Reliability of HfO2metal–insulator–metal capacitors under AC stress

Published:2016-03-21 Issue:16 Volume:49 Page:165502
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kassmi M,Jomni F,Gonon P,Khaldi O,Latu-Romain L,Mannequin C,Bsiesy A,Basrour S,Yangui B

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=16/a=165502/pdf

Reference28 articles.

1. Mechanism for stress‐induced leakage currents in thin silicon dioxide films

2. TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates

3. Resistance switching in HfO2 metal-insulator-metal devices

4. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

5. Evaluation of NBTI in<tex>$hbox HfO_2$</tex>Gate-Dielectric Stacks With Tungsten Gates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material;Journal of Materials Science: Materials in Electronics;2020-09-19

2. Fabrication of HfO2 based MOS and RRAM devices: A study of thermal annealing effects on these devices;DAE SOLID STATE PHYSICS SYMPOSIUM 2018;2019

3. Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2;AIP Advances;2017-05

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