Fabrication of HfO2 based MOS and RRAM devices: A study of thermal annealing effects on these devices
Author:
Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5113055
Reference10 articles.
1. Emerging Applications for High K Materials in VLSI Technology
2. Overview of emerging nonvolatile memory technologies
3. Reliability of HfO2metal–insulator–metal capacitors under AC stress
4. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
5. Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films
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1. Electron-Beam Deposition for the Synthesis of Memristive Structures Based on Hafnium Oxide;Nanobiotechnology Reports;2023-12
2. Radiation Response of HfOx-Based Resistive Random Access Memory (RRAM) Devices;ACS Applied Electronic Materials;2022-11-11
3. Hafnium Oxide (HfO 2 ) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories;Small;2022-05-05
4. Effects of Ambient and Annealing Temperature in HfO2 Based RRAM Device Modeling and Circuit-Level Implementation;ECS Journal of Solid State Science and Technology;2022-02-01
5. Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices;Journal of Materials Science: Materials in Electronics;2021-01-06
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