Modified Potential Well Formed by $\hbox{Si/SiO}_{2}/ \hbox{TiN/TiO}_{2}/\hbox{SiO}_{2}/\hbox{TaN}$ for Flash Memory Application-Reference-Cited by-同舟云学术

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Modified Potential Well Formed by $\hbox{Si/SiO}_{2}/ \hbox{TiN/TiO}_{2}/\hbox{SiO}_{2}/\hbox{TaN}$ for Flash Memory Application

Published:2010-11 Issue:11 Volume:57 Page:2794-2800
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Gang,Ra Chang Ho,Li Hua-Min,Shen Tian-zi,Cheong Byung-ki,Yoo Won Jong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5607250/05570944.pdf?arnumber=5570944

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in La-Based High-k Dielectrics for MOS Applications;Coatings;2019-03-27

2. Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer;Microelectronics Reliability;2012-11

3. LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications;Applied Physics A;2012-03-24

4. High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent- $\hbox{Si}_{3}\hbox{N}_{4}$-Thickness Trapping Layer;IEEE Transactions on Electron Devices;2012-01

5. High-Speed Multilevel nand Flash Memory With Tight $V_{\rm th}$ Distribution Using an Engineered Potential Well and Forward-Bias Adjusted Programming;IEEE Transactions on Electron Devices;2011-10

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