High-Speed Multilevel nand Flash Memory With Tight $V_{\rm th}$ Distribution Using an Engineered Potential Well and Forward-Bias Adjusted Programming
-
Published:2011-10
Issue:10
Volume:58
Page:3321-3328
-
ISSN:0018-9383
-
Container-title:IEEE Transactions on Electron Devices
-
language:
-
Short-container-title:IEEE Trans. Electron Devices
Author:
Zhang Gang,Wu Zhe,Yoo Won Jong
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials