Surface engineering for SiC etching with Ni electroplating masks

Author:

Beydoun Nour1,Lazar Mihai1,Gassmann Xavier1

Affiliation:

1. Light,Nanomaterials & Nanotechnologies, CNRS EMR 7004,University of Technology of Troyes,Troyes,France,10004

Funder

French National Research Agency

Publisher

IEEE

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration;2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2023-06-29

3. SiC Plasma and Electrochemical Etching for Integrated Technology Processes;Romanian Journal of Information Science and Technology;2023-03-27

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