Author:
BEYDOUN Nour, ,LAZAR Mihai,GASSMANN Xavier, ,
Abstract
This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and
Reference9 articles.
1. "[1] M. LAZAR, H. VANG, P. BROSSELARD, C. RAYNAUD, P. CREMILLIEU, J.-L. LECLERCQ, A. DESCAMPS, S. SCHARNHOLZ and D. PLANSON, Deep SiC etching with RIE, Superlattices and Microstructures 40(4-6), pp. 388-392, 2006.
2. [2] F. SIMESCU, D. COIFFARD, M. LAZAR, P. BROSSELARD and D. PLANSON, Study of trenching formation during SF6/O2 reactive ion etching of 4H-SiC, Journal of Optoelectronics and Advanced Materials 12, pp.766-769, 2010.
3. [3] T. T. H. NGUYEN, M. LAZAR, J.-L. AUGE, H. MOREL, L.-V. PHUNG and D. PLANSON, Vertical termination filled with adequate dielectric for SiC Devices in HVDC applications, Materials Science Forum 858, pp. 982-985, 2016.
4. [4] M. LAZAR, F. ENOCH, F. LAARIEDH, D. PLANSON and P. BROSSELARD, Influence of the masking material and geometry on the 4H-SiC RIE etched surface state, Materials Science Forum 679-680, pp. 477-480, 2011.
5. [5] N. BEYDOUN, M. LAZAR and X. GASSMANN, Surface engineering for SiC etching with Ni electroplating masks, Proceedings of 45th International Semiconductor Conference, Poiana Brasov, Romania, pp. 119-122, 2022.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献