Deep SiC etching with RIE-Reference-Cited by-同舟云学术

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Deep SiC etching with RIE

Published:2006-10 Issue:4-6 Volume:40 Page:388-392
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Lazar M.,Vang H.,Brosselard P.,Raynaud C.,Cremillieu P.,Leclercq J.-L.,Descamps A.,Scharnholz S.,Planson D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. J.W. Palmour, R. Singh, R.C. Glass, O. Kordina, C.H. Carter Jr., IEEE ISPSD’97, 1997, p. 25

2. Fast, smooth, and anisotropic etching of SiC using SF[sub 6]/Ar

3. ICP etching of SiC

4. Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms

5. Reactive ion etching of novel materials—GaN and SiC

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