Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology-Reference-Cited by-同舟云学术

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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology

Published:2023-09-04 Issue: Volume: Page:
ISSN:
Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

Makhoul Ralph¹,Beydoun Nour²,Bourennane Abdelhakim¹,Phung Luong Viêt³,Lazar Mihai²,Richardeau Frédéric⁴,Godignon Philippe⁵,Planson Dominique³,Morel Hervé³,Bourrier David¹

Affiliation:

1. LAAS-CNRS, Université de Toulouse, CNRS, UPS,Toulouse,France

2. Université Technologique de Troyes & CNRS EMR 7004,Light, Nanomaterials, Nanotechnologies,Troyes,France,10004

3. Ampère, Univ Lyon, INSA Lyon,Villeurbanne,France,69621

4. LAPLACE, Université de Toulouse, CNRS, INPT, UPS,Toulouse,France

5. IMB-CNM, Campus UAB,Bellatera,Spain,08193

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264325.pdf?arnumber=10264325

Reference18 articles.

1. Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

2. Analysis of the three-chip switching cells approach for integrated multiphase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypes

3. Deep SiC etching with RIE

4. Design and Process Development towards an Optimal 6.5 kV SiC Power MOSFET;soler;PhD thesis,2019

5. Three Multiterminal Silicon Power Chips for an Optimized Monolithic Integration of Switching Cells: Validation on an H-Bridge Inverter

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