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ICP etching of SiC

Published:1998-12 Issue:12 Volume:42 Page:2283-2288
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang J.J,Lambers E.S,Pearton S.J,Ostling M,Zetterling C.-M,Grow J.M,Ren F,Shul R.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Silicon carbide high-power devices

2. A high-current and high-temperature 6H-SiC thyristor

3. Trends in power semiconductor devices

4. Agarwal, A. K., Augustine, G., Balakrishna, V., Brandt, C. D., Burke, A. A., Chen, L. S., Clarke, R. C., Esker, P. M., Hobgood, H. M., Hopkins, R. H., Morse, A. W., Rowland, L. B., Seshadri, S., Siergiej, R. R., Smith, T. J., Jr. and Siriam, S., Tech. Dig. Inst. Electron. Dev. Meeting, 1996, pp. 9.1.1–9.1.6

5. Silicon carbide MOSFET technology

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layer-by-layer thinning of two-dimensional materials;Chemical Society Reviews;2024

2. A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide;Materials;2021-12-24

3. Device Processing Chain and Processing SiC in a Foundry Environment;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. Planar refractive lenses made of SiC for high intensity nanofocusing;Optics Express;2021-04-23

5. Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector;IEEE Journal of the Electron Devices Society;2020

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