Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters
Author:
Affiliation:
1. University of Toulouse, CNRS, UPS
2. University of Technology of Troyes
3. Univ Lyon, INSA Lyon, CNRS UMR5005
4. University of Toulouse, CNRS, INPT, UPS
5. IMB-CNM
Abstract
Publisher
Trans Tech Publications, Ltd.
Link
https://www.scientific.net/SSP.358.23.pdf
Reference14 articles.
1. Z. J. Shen: SiC Research Beyond Power MOSFET: What's Next? IEEE Power Electronics Magazine Vol. 8, no. 2 (2021) p.14.
2. H. Yamaguchi et al., 3D-PEIM International Symposium Osaka, Japan, 2021, p.1.
3. High Junction Temperature and Low Parasitic Inductance Power Module Technology for Compact Power Conversion Systems;Tanimoto;IEEE Transactions on Electron Devices
4. M. Okamoto, A. Yao, H. Sato, S. Harada: First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer ISPSD International Symposium, Nagoya, Japan (2021) p.71.
5. A. El Khadiry, A. Bourennane, F. Richardeau: Converter Integration in Si: Dual-Chip and Ultimate Monolithic Integrations IEEE TED, Vol. 63, no. 5 (2016) p.1977.
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