High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Jaipur, RJ, India
2. Department of Optoelectronics, National Dong Hwa University, Hualien County, Taiwan
Funder
National Science and Technology Council, R.O.C.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/9999138/10016715.pdf?arnumber=10016715
Reference43 articles.
1. Energy-per-Bit Limits in Plasmonic Integrated Photodetectors
2. A high-responsivity photodetector absent metal-germanium direct contact
3. High-bandwidth and high-responsivity waveguide-integrated plasmonic germanium photodetector
4. Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications
5. Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers
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