Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications-Reference-Cited by-同舟云学术

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Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

Published:2022 Issue: Volume:10 Page:649-659
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kumar Harshvardhan¹^ORCID,Kumar Pandey Ankit²^ORCID,Lin Chu-Hsuan³^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Jaipur, India

2. Department of Electronics and Communication Engineering, Bennett University, Greater Noida, India

3. Department of Optoelectronics, National Dong Hwa University, Hualien County, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09845706.pdf?arnumber=9845706

Reference58 articles.

1. Effects of Interface States on Ge-On-SOI Photodiodes

2. High performance silicon waveguide germanium photodetector

3. High-Speed Germanium-on-SOI Lateral PIN Photodiodes

4. Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications;Koester;IEEE Journal of Selected Topics in Quantum Electronics,2006

5. Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths

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1. High-performance Ge photodetectors on silicon photonics platform for optical interconnect;Sensors and Actuators A: Physical;2024-10

2. High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection;ACS Applied Nano Materials;2024-03-11

3. Development of the hybrid distributed Bragg reflectors for mid-infrared applications;Opto-Electronics Review;2024-01-17

4. Mid-Infrared Photodetectors Based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor With an i-GeSn Absorber Layer;IEEE Sensors Journal;2023-12-01

5. Shortwave Infrared Polarization Imaging and Monolithic Integrated Polarization Amplification Systems Based on Aligned Carbon Nanotube Arrays;Advanced Functional Materials;2023-08-30

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