Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers-Reference-Cited by-同舟云学术

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Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

Published:2015-04-27 Issue:17 Volume:106 Page:171908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kurosawa Masashi¹²,Kato Motohiro¹,Yamaha Takashi¹,Taoka Noriyuki¹,Nakatsuka Osamu¹,Zaima Shigeaki¹³

Affiliation:

1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan

3. EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919451

Reference42 articles.

1. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

2. Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

3. Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy

4. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

5. Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

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