Research of ultra high aspect ratio silicon etching in the advanced process-Reference-Cited by-同舟云学术

Research of ultra high aspect ratio silicon etching in the advanced process

Published:2022-06-20 Issue: Volume: Page:
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Container-title:2022 China Semiconductor Technology International Conference (CSTIC)
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Author:

Ji Zheng¹,Zhang Jian-kun¹,Yang Guang¹,Zhao Zun-hua¹,Wang Jing¹,Wang Xue-Sheng²,Shi Xia-Yu²,Li Song-Yu²,Lin Bing-Hui²,Huang Xin-Wen²,Chen Ying-Yi²,Guo Zhong-Ning²,Su Xian-Wen²

Affiliation:

1. Beijing NAURA Microelectronics Equipment Co. Ltd, No.8 Wenchang Avenue,Beijing Economic-Technological Development Area,Beijing City,China

2. ChangXin Memory Technologies, Inc. Ltd No. 388, Xingye Avenue,Economic and Technological Development Area,Hefei City,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856717.pdf?arnumber=9856717

Reference6 articles.

1. Si etching with high aspect ratio and smooth side profile for mold fabrication

2. Etching of Si with Cl2 using an electron cyclotron resonance source

3. Comparison of Cl[sub 2] and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source

4. Very uniform and high aspect ratio anisotropy thru Si via etching process in magnetic neutral loop discharge plasma;morikawa;Proc SPIE,2008

5. A novel process for high aspect ratio (HAR) trench etch on silicon on insulator (SI) structures;khan;Proceedings of the International Symposium on Plasma Process,0

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