Through recessed and regrowth gate technology for realizing process stability of GaN-GITs
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7509008/7520753/07520768.pdf?arnumber=7520768
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Suppression of Hot-Electron-Induced Dynamic RON Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit;IEEE Transactions on Power Electronics;2024-02
3. Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications;physica status solidi (a);2023-05-23
4. A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
5. A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications;IEEE Electron Device Letters;2022-10
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