A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications-Reference-Cited by-同舟云学术

A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

Published:2022-10 Issue:10 Volume:43 Page:1629-1632
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Tsung-Ying¹^ORCID,Huang Huuan-Yao¹,Liang Yan-Kui¹^ORCID,Wu Jui-Sheng²^ORCID,Kuo Mei-Yan³,Chang Kuan-Pang³,Hsu Heng-Tung¹^ORCID,Chang Edward-Yi⁴^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

2. Department of Materials Science and Engineering, National YangMing Chiao Tung University, Hsinchu, Taiwan

3. Department of Materials Science and Engineering, Graduate Program for Nanotechnology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Department of Materials Science and Engineering, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Chung-Shan Institute of Science and Technology

Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09868047.pdf?arnumber=9868047

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering;Applied Physics Reviews;2024-05-31

2. Control of Surface Chemistry in Recess Etching toward Normally Off GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors;physica status solidi (RRL) – Rapid Research Letters;2024-04-29

3. Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications;Micromachines;2023-08-11

4. Research on p-GaN/AlGaN high sidewall verticality and low damage etching applied to enhanced GaN HEMTs devices;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

5. Exploring Next-Generation GaN Power Devices with Ferroelectric Charge Trap Gate Stack Technology for Normally-OFF Operations;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08