A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)-Reference-Cited by-同舟云学术

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A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Miyoshi Tomoyuki,Suzuki Hiroshi,Furukawa Tomoyasu,Watanabe So,Shiraishi Masaki,Takeuchi Yujiro,Mori Mutsuhiro

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170159.pdf?arnumber=9170159

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-conductivity IGBT with Time and Space Control of Stored Carrier (TASC HiGT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

2. Structural parameter analysis on 6.5 kV integrated time and space carrier controllable dual-gate HiGT (i-TASC);Japanese Journal of Applied Physics;2023-06-01

3. Integrated Time and Space Carrier Controllable HiGT (i-TASC) with Widely Designable Backside Technology;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. 4.5 kV Double-gate RC-IEGT with Hole Control Gate;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

5. A Control Model for Following Target Inclination Angle in Lateral Direction for Omni-Directional Low-Floor Mobility;IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society;2021-10-13

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