A Wafer-Level Three-Dimensional Integration Scheme With Cu TSVs Based on Microbump/Adhesive Hybrid Bonding for Three-Dimensional Memory Application-Reference-Cited by-同舟云学术

A Wafer-Level Three-Dimensional Integration Scheme With Cu TSVs Based on Microbump/Adhesive Hybrid Bonding for Three-Dimensional Memory Application

Published:2012-06 Issue:2 Volume:12 Page:209-216
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Ko Cheng-Ta,Hsiao Zhi-Cheng,Chang Yao-Jen,Chen Peng-Shu,Hwang Yu-Jiau,Fu Huan-Chun,Huang Jui-Hsiung,Chiang Chia-Wen,Sheu Shyh-Shyuan,Chen Yu-Hua,Lo Wei-Chung,Chen Kuan-Neng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/6210435/06186810.pdf?arnumber=6186810

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature Cu/SiO2 hybrid bonding based on Ar/H2 plasma and citric acid cooperative activation for multi-functional chip integration;Applied Surface Science;2024-03

2. A Method for Fast Au-Sn Bonding at Low Temperature Using Thermal Gradient;Micromachines;2023-12-15

3. A Novel Polymer-Based Ultra-High Density Bonding Interconnection;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

4. A hybrid bonding interconnection with a novel low-temperature bonding polymer system;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC);2022-05

5. Micron copper needles prepared by electrodeposition for low temperature bonding;2019 20th International Conference on Electronic Packaging Technology(ICEPT);2019-08