Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects
Author:
Affiliation:
1. DPIA, University of Udine,Udine,Italy,33100
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9947060/9947094/09947169.pdf?arnumber=9947169
Reference23 articles.
1. Modeling of Negative Capacitance in Ferroelectric Thin Films
2. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
3. Domains and domain dynamics in fluorite-structured ferroelectrics
4. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
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1. Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors;Science Advances;2024-06-07
2. FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends;IEEE Transactions on Electron Devices;2024-01
3. Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper);2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
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