Domains and domain dynamics in fluorite-structured ferroelectrics-Reference-Cited by-同舟云学术

Domains and domain dynamics in fluorite-structured ferroelectrics

Published:2021-06 Issue:2 Volume:8 Page:021312
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Lee Dong Hyun¹^ORCID,Lee Younghwan²^ORCID,Yang Kun¹,Park Ju Yong¹,Kim Se Hyun¹³,Reddy Pothala Reddi Sekhar¹,Materano Monica⁴^ORCID,Mulaosmanovic Halid⁴^ORCID,Mikolajick Thomas⁴⁵^ORCID,Jones Jacob L.²^ORCID,Schroeder Uwe⁴^ORCID,Park Min Hyuk¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Pusan National University, 2, Busandaehak-ro-63-beon-gil, Geumjeong-gu, Busan 46241, South Korea

2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

3. Technology Licensing Office, Institute for Research and Industry Cooperation, Pusan National University, 2, Busandaehak-ro-63-beon-gil, Geumjeong-gu, Busan 46241, South Korea

4. NaMLab gGmbH, Noethnitzer Str. 64, Dresden, Germany

5. Department of Nanoelectronics, Dresden University of Technology, Dresden, Germany

Funder

National Research Foundation of Korea

Center for Dielectrics and Piezoelectrics, North Carolina State University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0047977

Reference197 articles.

1. J. Müller , E. Yurchuk , T. Schlösser , J. Paul , R. Hoffmann , S. Müller , D. Martin , S. Slesazeck , P. Polakowski , and J. Sundqvist , 2012 Symposium on VLSI Technology (VLSIT) (2012), pp. 25–26.

2. S. Dünkel , M. Trentzsch , R. Richter , P. Moll , C. Fuchs , O. Gehring , M. Majer , S. Wittek , B. Müller , and T. Melde , 2017 IEEE International Electron Devices Meetingtell (IEDM) (2017), pp. 19.17.11–19.17.14.

3. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

4. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

5. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

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