Novel Channel-on-Fin (COF) IGZO-TFTS With Ultra-Scaled Back Gate Length of 23 NM
Author:
Affiliation:
1. Institute of Microelectronics,Chinese Academy of Sciences,Beijing,China,100029
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219386.pdf?arnumber=10219386
Reference5 articles.
1. Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec
2. Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)
3. High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling
4. Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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