Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9420829/9420830/09421049.pdf?arnumber=9421049
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrafast (50 ns) ID –VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator;IEEE Transactions on Electron Devices;2024-05
2. Deciphering the genetic relationship between W and Au in a W-Au co-mineralized system: Trace elements of pyrite and sulfur isotopes of sulfides from the Yangwuchang W-Au deposit, North Qinling, China;Journal of Asian Earth Sciences;2024-04
3. Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain;IEEE Electron Device Letters;2023-08
4. Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors;Applied Surface Science;2023-07
5. Novel Channel-on-Fin (COF) IGZO-TFTS With Ultra-Scaled Back Gate Length of 23 NM;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26
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