Defect localization on operating condition failure of 3D NAND device level using modified Lock-in thermography-Reference-Cited by-同舟云学术

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Defect localization on operating condition failure of 3D NAND device level using modified Lock-in thermography

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Gan Yong Yang¹,Cheng Lim Yong¹,Loke Bee Chin¹

Affiliation:

1. Western Digital Corporation,Failure Analysis Department,Batu Kawan,Penang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249052.pdf?arnumber=10249052

Reference7 articles.

1. Early detection of electrical defects in deep trench capacitors using voltage contrast inspection

2. Reliability Simulation and Circuit-Failure Analysis in Analog and Mixed-Signal Applications;yan;IEEE Transactions on Device and Materials Reliability,2009

3. Utilization of ELITE System for Precise Fault Localization of Metal Defect Functional Failure

4. Detection of critical defects with E-beam technology for development and monitoring of advanced NAND processes

5. Micrograph contrast in low-voltage SEM and cryo-SEM

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