RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS-Reference-Cited by-同舟云学术

RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
language:
Short-container-title:

Author:

Lee Jian-Hsing¹,Li Ching-Ho²,Nidhi Karuna³,Lin Chih-Hsuan¹,Chuang Chieh-Yao¹,Lin Wei-Hsin¹,Hsu Kei-Chieh¹,Jou Yeh-Ning¹,Huang Shao-Chang¹,Liao Chih-Cherng²,Chen Ke-Horng²

Affiliation:

1. Vanguard International Semiconductor Corp.,DE Department,HsinChu City,Taiwan

2. National Yang Ming Chiao Tung University,Department of Electrical and Computer Eng.,HsinChu City,Taiwan

3. Richtek Technology Corp.,ESD Department,ChuPei City,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249061.pdf?arnumber=10249061

Reference33 articles.

1. Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies;streibl;Proc EOS/ESD Symp,2002

2. The influence of NBL layout and LOCUS space on component ESD and system level ESD for HV-LDMOS;lee;IEEE Proc Int Symp on Power Semi Dev & ICs (ISPSD),2007

3. The positive trigger voltage lowering effect for latch-up;lee;Proc IEEE Int Symp Phys and Failure Anal Integr Circuits,2004

4. Tunable Holding-Voltage High Voltage ESD Devices

5. A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24