A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event-Reference-Cited by-同舟云学术

A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
language:
Short-container-title:

Author:

Lee Jian-Hsing¹,Li Ching-Ho²,Liao Chih-Cherng²,Huang Yeh-Jen¹,Nidhi Karuna³,Hong Li-Yang¹,Lin Ting-You¹,Jou Yeh-Ning¹,Huang Shao-Chang¹,Chen Ke-Horng²

Affiliation:

1. Vanguard International Semiconductor Corp.,DE Department,HsinChu City,Taiwan

2. National Yang Ming Chiao Tung University,Department of Electrical and Computer Eng.,HsinChu City,Taiwan

3. Richtek Technology Corp.,ESD Department,ChuPei City,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249114.pdf?arnumber=10249114

Reference24 articles.

1. The effect of implant angle and resist shadowing in submicron implant technology;lee;Master Dissertation,2006

2. System-Level ESD-Induced Voltage Fluctuation to the Power of Integrated Circuits on System Board

3. Doping channeling as a function of implant angle for low energy applications;walther;Proc Int Conf Ion Implantation Technol,1998

4. The positive trigger voltage lowering effect for latch-up;lee;Proc IEEE Int Symp Phys and Failure Anal Integr Circuits,2004

5. RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24