Author:
Lee Jian-Hsing,Iyer Natarajan Mahadeva
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24
2. A Combination of Implant Shadow and Skin Effects Leading to HV Devices Failure during the ESD Event;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24
3. High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities;2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan);2023-07-17
4. System-Level ESD-Induced Voltage Fluctuation to the Power of Integrated Circuits on System Board;IEEE Transactions on Electromagnetic Compatibility;2022-12