On The Contribution of Secondary Holes in Hot-Carrier Degradation – a Compact Physics Modeling Perspective-Reference-Cited by-同舟云学术

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On The Contribution of Secondary Holes in Hot-Carrier Degradation – a Compact Physics Modeling Perspective

Published:2023-03-07 Issue: Volume: Page:
ISSN:
Container-title:2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Tyaginov S.E.¹,Bury E.¹,Grill A.¹,Yu Z.¹,Makarov A.¹,De Keersgieter A.¹,Vexler M.I.²,Vandemaele M.¹,Wang R.³,Spessot A.¹,Chasin A.¹,Kaczer B.¹

Affiliation:

1. imec, Kapeldreef 75,Leuven,Belgium,3001

2. Ioffe Physical-Technical Institute,St.-Petersburg,Russia,194021

3. Institute of Microelectronics, Peking University,Beijing,China,100871

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103111.pdf?arnumber=10103111

Reference28 articles.

1. Hot‐electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface

2. Dissociation kinetics of hydrogen-passivated (111) Si-SiO2interface defects

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling;Micromachines;2024-01-30

2. DC to AC analysis of HC vs. BTI damage in N-EDMOS used in single photon avalanche diode cell;Microelectronics Reliability;2023-11

3. Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range;Micromachines;2023-10-30

4. A Pragmatic Model to Predict Future Device Aging;IEEE Access;2023

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