Author:
Pitard H.,Bravaix A.,Federspiel X.,Fillon R.,Cacho F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Hot-carrier degradation in power LDMOS: drain Bias dependence and lifetime evaluation;Tallarico;IEEE Trans. Electron Devices,2018
2. Body-biasing considerations with SPAD FDSOI: advantages and drawbacks;Chaves;European Solid-State Device Research Conference Proc. (ESSDERC),2019
3. Breakdown voltage model and electrical characteristics of CMOS compatible RESURF STI drain extended MOS transistors;Tsai;IEEE Trans. on Elec. Devices,2015
4. Hot-carrier degradation in power LDMOS: selective LOCOS- Versus STI-based architecture;Tallaricco;IEEE Jour. Electron Devices Soc. (JEDS),2018
5. An LDMOS hot carrier model for circuit reliability simulation;Sasse;IEEE Int. Reliability Physics Symp. (IRPS) Proc,2014
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献