Strategy for Low Temperature HZO Ferroelectric Capacitors for Back-End of Line Applications
Author:
Affiliation:
1. University of Texas at Dallas,USA
2. Inha University,Korea
3. Yonsei University,Korea
4. Kangwon National University,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103066.pdf?arnumber=10103066
Reference5 articles.
1. Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis
2. Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
3. Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant
4. Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
5. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C);IEEE Transactions on Electron Devices;2024-08
2. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition;ACS Applied Electronic Materials;2023-09-07
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