Adaptive Multi-Pulse Program Scheme Based on Tunneling Speed Classification for Next Generation Multi-Bit/Cell NAND FLASH-Reference-Cited by-同舟云学术

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Adaptive Multi-Pulse Program Scheme Based on Tunneling Speed Classification for Next Generation Multi-Bit/Cell NAND FLASH

Published:2013-04 Issue:4 Volume:48 Page:948-959
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Cho Yong Sung,Park Il Han,Yoon Sang Yong,Lee Nam Hee,Joo Sang Hyun,Song Ki-Whan,Choi Kihwan,Han Jin-Man,Kyung Kye Hyun,Jun Young-Hyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/6484888/06423217.pdf?arnumber=6423217

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memory;Solid-State Electronics;2023-04

2. NAND Flash technology status and perspectives;Semiconductor Memories and Systems;2022

3. Multitoken-Based Power Management for NAND Flash Storage Devices;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2020-10

4. Bringing Order to Chaos;ACM Transactions on Storage;2018-11-26

5. An SLC-Like Programming Scheme for MLC Flash Memory;ACM Transactions on Storage;2018-02-28

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