Author:
Yang Giho,Park Chanyang,Nam Kihoon,Kim Donghyun,Park Min Sang,Baek Rock-Hyun
Funder
National Research Foundation of Korea
SK Hynix
Pohang University of Science and Technology
Ministry of Science, ICT and Future Planning
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Futatsuyama T, Fujita N, Tokiwa N, Shindo Y, Edahiro T, Kamei T, et al. A 113mm2 32Gb 3b/cell NAND flash memory. 2009 IEEE Int. Solid-State Circuits Conf-Dig. of Tech. Pap. 2009; 242–243. doi: 10.1109/ISSCC.2009.4977398.
2. Siau C, Kim K-H, Lee S, Isobe K, Shibata N, Verma K, et al. 13.5 A 512Gb 3-bit/cell 3D flash memory on 128-wordline-layer with 132MB/s write performance featuring circuit-under-array technology. 2019 IEEE Int. Solid-State Circuits Conf. -(ISSCC) 2019; 218–220. 10.1109/ISSCC.2019.8662445.
3. Kim W, Choi S, Sung J, Lee T, Park C, Ko H, et al. Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage. 2009 Symp. on VLSI Technol. 2009; 188–189.
4. 256 Gb 3 b/cell V-NAND flash memory with 48 stacked WL layers;Kang;IEEE J Solid-State Circuits,2016
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