256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers-Reference-Cited by-同舟云学术

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

Published:2017-01 Issue:1 Volume:52 Page:210-217
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kang Dongku^ORCID,Jeong Woopyo,Kim Chulbum,Kim Doo-Hyun,Cho Yong Sung,Kang Kyung-Tae,Ryu Jinho,Kang Kyung-Min,Lee SungYeon,Kim Wandong,Lee Hanjun,Yu Jaedoeg,Choi Nayoung,Jang Dong-Su,Lee Cheon An,Min Young-Sun,Kim Moo-Sung,Park An-Soo,Son Jae-Ick,Kim In-Mo,Kwak Pansuk,Jung Bong-Kil,Lee Doo-Sub,Kim Hyunggon,Ihm Jeong-Don,Byeon Dae-Seok,Lee Jin-Yup,Park Ki-Tae,Kyung Kye-Hyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7811159/07636938.pdf?arnumber=7636938

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