A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx-Reference-Cited by-同舟云学术

A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx

Published:2020-01 Issue:1 Volume:55 Page:167-177
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kim Dongkyun,Koo Kibong,Kim Yongmi,Lee Dong Uk,Lee Jaein,Kwon Kihun,Choi Byeongchan,Kim Hongjung,Ku Sanghyun^ORCID,Kim Jongsam,Oh Seungwook,Park Minsu^ORCID,Im Dain,Lee Yongsung,Park Mingyu,Choi Jonghyuck,Chun Junhyun,Jin Kyowon,Jang Sungchun,Song Jun-Yong^ORCID,Chi Hankyu,Choi Geunho,Choi Sunmyung,Kim Changhyun,Han Minsik

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/8944135/08944229.pdf?arnumber=8944229

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