Short-Circuit Capability Demonstrated for GaN Power Switches-Reference-Cited by-同舟云学术

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Short-Circuit Capability Demonstrated for GaN Power Switches

Published:2021-06-14 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Bisi Davide,Gritters John,Hosoda Tsutomu,Kamiyama Masamichi,Cruse Bill,Huang YuLu,McKay Jim,Gupta Geetak,Lal Rakesh,Neufeld Carl,Zuk Philip,Wu YiFeng,Parikh Primit,Mishra Umesh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9486978/9486980/09486987.pdf?arnumber=9486987

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Ultra)wide-bandgap semiconductors for electric vehicles;MRS Bulletin;2024-07

2. Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT;Applied Physics Letters;2024-03-04

3. High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension;IEEE Transactions on Electron Devices;2024-03

4. Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique;IEEE Electron Device Letters;2024-02

5. 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability;IEEE Electron Device Letters;2023-10

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