A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device-Reference-Cited by-同舟云学术

A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

Published:2017-01 Issue:1 Volume:5 Page:18-22
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Eng Yi-Chuen^ORCID,Hu Luke,Chang Tzu-Feng,Hsu Steven,Chiou Chun Mao,Wang Ted,Yang Chih-Wei,Lin Chien-Ting,Wang I-Chang,Chen Ming-Chih,Lai Andy,Wang Pei-Wen,Hsu Chia-Jung,Pang Wen-Yuan,Kuo Chin-Hao,Cheng Osbert,Wang Chih-Yi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/7792235/07752799.pdf?arnumber=7752799

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1. Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications;Silicon;2022-09-27

2. Significance of Overdrive Voltage in the Analysis or Short-Channel Behaviors of n-FinFET Devices;IEEE J ELECTRON DEVI;2022

3. Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices;IEEE Journal of the Electron Devices Society;2022

4. Analysis of Extended Pile Gate Trapezoidal Bulk FinFET;IETE Journal of Research;2019-03-18

5. Monitoring of FinFET Characteristics Using $\Delta V_{\text{DIBLSS}}/(I_{\text{on}}/I_{\text{off}})$ and $\Delta V_{\text{DIBL}}/(I_{\text{on}}/I_{\text{off}})$;IEEE Journal of the Electron Devices Society;2019