Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02137-0.pdf
Reference26 articles.
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3. Lin CH et al (2012) Channel doping impact on FinFETs for 22nm and beyond. IEEE symposium on VLSI technology, pp 15–16
4. Breed A, Roeuker KP (2003) Dual-gate (FinFET) and Tri-Gate MOSFETs: simulation and design. IEEE International Semiconductor Device Research Symposium, pp 150–151
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