Surface state and surface recombination velocity characteristics of Si-SiO2interfaces
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31618/01474268.pdf?arnumber=1474268
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3. Carrier capture at the SiO2–Si interface: A physical model;Applied Physics Letters;2007-09-10
4. Effect of the growth of thin SiO interlayers on the performance of Si solar cells;Physica Status Solidi (a);1989-09-16
5. Recombination properties of oxygen‐precipitated silicon;Journal of Applied Physics;1986-04
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