Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2888965
Reference16 articles.
1. Experimental and Simulated Results of SiC Microwave Power MESFETs
2. 1800 V NPN bipolar junction transistors in 4H-SiC
3. Geometrical effects in high current gain 1100-V 4H-SiC BJTs
4. Intrinsic SiC/SiO2 Interface States
5. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
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1. Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation;Materials Science in Semiconductor Processing;2024-02
2. Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor;Journal of Applied Physics;2023-12-15
3. Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor;IEEE Transactions on Electron Devices;2021-05
4. Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance;IEEE Transactions on Electron Devices;2019-11
5. Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes;IEEE Transactions on Electron Devices;2018-11
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