Effect of the growth of thin SiO interlayers on the performance of Si solar cells-Reference-Cited by-同舟云学术

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Effect of the growth of thin SiO interlayers on the performance of Si solar cells

Published:1989-09-16 Issue:1 Volume:115 Page:K125-K128
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Chakravarty B. C.,Sharma S. K.,Singh S. N.,Das B. K.,Kumar Ravi,Chakraborty B. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. , and , Proc. 19th IEEE Photovoltaic Specialists Conf., New Orleans, May 1987.

2. On the Mechanism of the Anodic Oxidation of Si at Constant Voltage

3. Ion Transport Phenomena in Insulating Films

4. Fixed Charge Density ( Q ss ) at the Si ‐ SiO2 Interface for Thin Oxides

5. A quasi-static technique for MOS C-V and surface state measurements

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of screen-printed and evaporated back contact of silicon solar cells and their effect on open-circuit voltage and short-circuit current;Journal of Materials Science Letters;1993

2. Oxidation of silicon in RF induced oxygen plasma;Journal of Materials Science Letters;1990-08

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